1. The electron density in a
silicon sample at 310 K is 1015 cm_3. Calculate Ec EF and the hole density using the Boltzmann
2. A GaAs sample is doped n-type at 4 _1018 cm_3. Assume
that all the donors are ionized. What is the position of the Fermi
level at 300 K?
3. Consider a n-type silicon with a donor energy 60
meV below the conduction band. The sample is doped at 1015 cm_3.
Calculate the temperature at which
30 per cent of the donors are not ionized.
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