Silicon tetrachloride, SiCl 4 , is a key chemical in the silicon chemical vapor deposition. It is…

Silicon tetrachloride, SiCl4, is
a key chemical in the silicon chemical vapor deposition. It is used in the
production of silane, SiH4, which is used as described in Problem
28.2. The purity of SiCl4 is essential to the production of
high-quality silicon films. To eliminate trichlorosilane, SiHCl3, within the
high-purity silicon tetrachloride, chlorine gas is bubbled through the liquid
SiCl4 at 298 K to promote the following reaction:

The HCl is then easily removed in a
stripper, using nitrogen as the stripping gas.

To determine the mass-transfer coefficient
of chlorine in liquid
»

Silicon tetrachloride, SiCl4, is
a key chemical in the silicon chemical vapor deposition. It is used in the
production of silane, SiH4, which is used as described in Problem
28.2. The purity of SiCl4 is essential to the production of
high-quality silicon films. To eliminate trichlorosilane, SiHCl3, within the
high-purity silicon tetrachloride, chlorine gas is bubbled through the liquid
SiCl4 at 298 K to promote the following reaction:

The HCl is then easily removed in a
stripper, using nitrogen as the stripping gas.

To determine the mass-transfer coefficient
of chlorine in liquid SiCl4, a Schmidt number is needed. Evaluate
the Schmidt number for chlorine in liquid silicon tetrachloride at 298 K.

The following information is available for
SiCl4 at 298 K:

The diffusivity for chlorine in silicon
tetrachloride can be evaluated using the Wilke–Chang equation.

Problem 28.2

One step in the manufacture of optical
fibers is the chemical vapor deposition of silane, SiH4, on the
inside surface of a hollow glass fiber to form a very thin cladding of solid
silicon by the reaction

The process is carried out at temperature
of 900 K and a system pressure of 100 Pa. Silane (A) is diluted to 1.0 mol% in
the inert helium (B) carrier gas. The binary gas diffusivity of silane in
helium at 298 K and 101.3 kPa is 0.518 cm2/s and the kinematic
viscosity of the helium gas at 900 K is 5.6 cm2 /s.

Determine the Schmidt number of silane (g)
in the helium (g) carrier gas.

»

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